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CY7C038 - Dual-Port Static RAM

Download the CY7C038 datasheet PDF. This datasheet also covers the CY7C037 variant, as both devices belong to the same dual-port static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7C027/028 and CY7C037/038 are low-power CMOS 32K, 64K x 16/18 dual-port static RAMs.

Various arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data.

Key Features

  • True Dual-Ported memory cells which allow simultaneous access of the same memory location.
  • 32K x 16 organization (CY7C027).
  • 64K x 16 organization (CY7C028).
  • 32K x 18 organization (CY7C037).
  • 64K x 18 organization (CY7C038).
  • 0.35-micron CMOS for optimum speed/power.
  • High-speed access: 12[1]/15/20 ns.
  • Low operating power.
  • Active: ICC = 180 mA (typical).
  • Standby: ISB3 = 0.05 mA (typical).
  • Fully asynch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C037-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C008 64K/128K x 8/9 Dual-Port Static RAM Cypress
CY7C008V 3.3V 64K/128K x 8/9 Dual-Port Static RAM Cypress
CY7C009 64K/128K x 8/9 Dual-Port Static RAM Cypress
CY7C009V 128K x 8 Dual-Port Static RAM Cypress
CY7C018 64K/128K x 8/9 Dual-Port Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C036AV Dual-Port Static RAM
CY7C037 Dual-Port Static RAM
CY7C006 (CY7C006 / CY7C016) 16K x 8/9 Dual-Port Static RAM
CY7C006A 16K x 8 Dual-Port Static RAM
CY7C006AV Asynchronous Dual-Port Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
25/0251 CY7C027/028 CY7C037/038 32K/64K x 16/18 Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 32K x 16 organization (CY7C027) • 64K x 16 organization (CY7C028) • 32K x 18 organization (CY7C037) • 64K x 18 organization (CY7C038) • 0.35-micron CMOS for optimum speed/power • High-speed access: 12[1]/15/20 ns • Low operating power — Active: ICC = 180 mA (typical) — Standby: ISB3 = 0.